Analysis of Quantum-well Heterojunction Emitter Bipolar Transistor Design
نویسندگان
چکیده
منابع مشابه
GaAs Heterojunction Bipolar Transistor Emitter Design
We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...
متن کاملAnalysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser
In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...
متن کاملGaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth
To explore monolithically integrated phototransmitters, a graded-index quantum well laser was integrated with a selectivity regrown heterojunction bipolar transistor (HBT). The laser utilized a p-up configuration, and the HBT used collector down geometry. This scheme allowed the devices to be interconnected through the n +-GaAs substrate. The threshold current (It,,) for the ridge waveguide las...
متن کاملMulti-emitter Si/Ge Si Heterojunction Bipolar Transistor with No Base Contact and Enhanced Logic Functionality
We demonstrate multi-emitter Si/GexSi1 x npn heterojunction bipolar transistors (HBT’s) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain 400 regardless of whether t...
متن کاملCharacterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors
ACKNOWLEDGEMENTS I am deeply indebted to Dr. John D. Cressler for his patience, guidance, and support throughout my master's program. My inspiration came from his passion for research and his confidence in my abilities. Working under his leadership in such an exciting field was both educationally and professionally enriching. I would also like to thank the other members of my thesis advisory co...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: American Journal of Nano Research and Applications
سال: 2020
ISSN: 2575-3754
DOI: 10.11648/j.nano.20200801.12